▎ 摘　　要

NOVELTY - A carbon-containing metal is plated to silicon substrate having thermal oxidation layer, and metal film is formed to obtain silicon substrate. The obtained silicon substrate is provided and plated with metal film into a vacuum annealing furnace, annealing is carried out at 900-1100 degrees C for 5-100 minutes and pressure of 10-4-10-2 Pa to obtain sample comprising graphene, metal film, thermal oxidation layer and silicon substrate. The obtained silicon substrate is etched to obtain graphene film. USE - Preparation of graphene film. ADVANTAGE - The method efficiently provides graphene film having uniformly dispersed carbon and large surface area, by a simple process.