▎ 摘　　要

NOVELTY - The method comprises forming graphene layers on a silicon carbide (SiC) wafer (210) such that graphene layers (231, 232, 233) are disposed on a buffer layer (220) of the SiC wafer, removing the graphene layers from the buffer layer, converting the buffer layer to a single-layer graphene, and determining, using a Raman spectrometer, that the graphene layers are no longer on the buffer layer. The buffer layer is formed of carbon, and is a top layer of the SiC wafer. The step of forming the graphene layers comprises sublimating silicon of the SiC wafer. USE - The method is useful for fabricating a single-layer graphene on a silicon carbide (SiC) wafer that is useful as channels of a field-effect transistor array, where the channels are a patterned single-layer graphene (all claimed). ADVANTAGE - The method enables efficient fabrication of the structurally and chemically stable single-layer graphene on the silicon carbide wafer with improved charge mobility and current density. DETAILED DESCRIPTION - The method comprises forming graphene layers on a silicon carbide (SiC) wafer (210) such that graphene layers (231, 232, 233) are disposed on a buffer layer (220) of the SiC wafer, removing the graphene layers from the buffer layer, converting the buffer layer to a single-layer graphene, and determining, using a Raman spectrometer, that the graphene layers are no longer on the buffer layer. The buffer layer is formed of carbon, and is a top layer of the SiC wafer. The step of forming the graphene layers comprises sublimating silicon of the SiC wafer. The step of sublimating the silicon of SiC wafer comprises performing a thermal treatment on the SiC wafer in a chamber at a pressure of 10-9 torr, at a temperature of 1300 degrees C and for a time of 5-60 minutes. The step of removing the graphene layers comprises: intercalating acid or alkali metal between the graphene layers and between the graphene layers and the buffer layer; detaching the graphene layers using an adhesive member or an adhesive tape or using an ultrasonic wave; forming a metal adhesive layer on the graphene layers; forming a polymer support member on the metal adhesive layer; and drawing the polymer support member in a direction away from the SiC wafer. The intercalating step is performed by dipping the SiC wafer in a solution in which sulfuric acid and nitric acid are mixed at a molar ratio of 80:20, and comprises intercalating alkali metal atoms by sublimating the alkali metal. The ultrasonic wave is generated at a frequency of 10-20 kHz for 20 minutes. The step of converting the buffer layer to the single-layer graphene comprises thermally treating the SiC wafer in a hydrogen atmosphere or in a lithium gas atmosphere to make a silicon-hydrogen bond or lithium-silicon bond, respectively. The metal adhesive layer is attached to the graphene layers. The metal adhesive layer has a thickness of 10-1000 nm. The polymer support member has a thickness of 5-500 mu m. An INDEPENDENT CLAIM is included for a SiC wafer. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a method of fabricating a single-layer graphene. Silicon carbide wafer (210) Buffer layer (220) Multilayer graphene (230) Graphene layers. (231, 232, 233)