▎ 摘　　要

NOVELTY - A cover (2) has a central intake port communicated with gas nozzle for uniform distribution of high purity gases into the reaction chamber. A reaction chamber is provided in middle of housing and set with sealed quartz tubes (10). A graphite heating element (4) is placed in inside a graphite crucible (5) used for placing the substrate. The reaction chamber is fixed at bottom of housing support by fixed support frame (12). A cooling water system is arranged in inner bottom of casing. An intermediate frequency coil (11) is located for induction heating of graphite heating element. USE - Device for preparing large-size high-quality single crystal graphene on silicon carbide substrate. ADVANTAGE - The simple structure and preparation convenience of device are ensured. The preparation performance of the graphene is improved. The production cost is reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing large-size high-quality single crystal graphene on silicon carbide substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the device for preparing large-size high-quality single crystal graphene on silicon carbide substrate. (Drawing includes non-English language text) Cover (2) Graphite heating element (4) Graphite crucible (5) Quartz tube (10) Intermediate frequency coil (11) Fixed support frame (12)