▎ 摘　　要

NOVELTY - The diode has a lightly doped N-type silicon carbide layer coated on a heavily doped N-type silicon carbide substrate. A graphene layer is coated on a non-doped silicon carbide layer. A rear part of the heavily doped N-type silicon carbide substrate is provided with an ohm contact electrode. A Schottky contact electrode is fixed on the graphene layer for forming an anode electrode. The non-doped silicon carbide layer is crystal of hexagonal silicon carbide monocrystalline wafer, where doping concentration of the heavily doped N-type silicon carbide substrate is greater than 1018 cm-3. USE - Schottky diode. ADVANTAGE - The diode can reduce Schottky diode forward threshold voltage and reverse leakage current. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a Schottky diode. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a Schottky diode.