▎ 摘　　要

NOVELTY - The structure has an epitaxy piece and a base plate i.e. sapphire base plate that are formed with a first buffer layer, a second buffer layer, graphene layer and an epitaxy structure layer. The epitaxy structure layer, second buffer layer and a N-type semiconductor layer are formed together. A multi quantum trap layer, P-type electronic blocking layer and a P-type semiconductor layer are formed together. The first buffer layer is made of silicon carbide material. Thickness of the graphene layer is maintained about 0.3 to 10 nm. The second buffer layer is made of trimethylaluminium material. USE - Light sending diode epitaxial wafer structure. ADVANTAGE - The structure has better peeling off effect and adhesion effect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a light sending diode epitaxial wafer structure preparing method. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a light sending diode epitaxial wafer structure.