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  • 专利标题:   Formation of graphene pattern involves providing substrate, forming masking layer having opening in exposed surface of substrate, forming graphene layer in opening formed on surface of substrate, and removing masking layer.
  • 专利号:   CN104217930-A, CN104217930-B
  • 发明人:   WANG W, BO W
  • 专利权人:   SEMICONDUCTOR MFG INT SHANGHAI CORP, SEMICONDUCTOR MFG INT SHANGHAI CORP
  • 国际专利分类:   H01L021/205
  • 专利详细信息:   CN104217930-A 17 Dec 2014 H01L-021/205 201517 Pages: 11 Chinese
  • 申请详细信息:   CN104217930-A CN10224082 05 Jun 2013
  • 优先权号:   CN10224082

▎ 摘　　要

NOVELTY - Formation of graphene pattern involves providing a substrate, forming a masking layer having opening in the exposed surface of substrate, forming graphene layer in the opening formed on the surface of the substrate, and removing the masking layer. USE - Formation of graphene pattern (claimed). ADVANTAGE - The method enables formation of graphene pattern with high quality and suppressed generation of defects.