▎ 摘　　要

NOVELTY - Preparing a high-performance thermal interface material comprises e.g. using a mold to squeeze the three-dimensional porous metal to a certain proportion along the plane (X, Y direction), heating the chamber of the reaction furnace to the set temperature of 600-1200°C under the protective atmosphere of the carrier gas, passing into the reaction furnace cavity the mixed atmosphere of carbon source gas, reducing gas and carrier gas, performing catalytic growth of graphene on the surface of a porous metal substrate with an oriented close-packed structure along the direction perpendicular to the plane (Z), obtaining the graphene thermal conduction network framework structure that grows on the porous metal substrate along the direction perpendicular to the plane direction (Z) oriented close-packed structure, and using a metal etchant to remove the porous metal substrate and using vacuum impregnation process to fill the polymer substrate in the porous graphene pores, and complete the curing. USE - The method is useful for preparing a high-performance thermal interface material. ADVANTAGE - The high-performance TIM has a thermal conductivity of up to 200W/mK in the direction perpendicular to the plane, and lower hardness and higher strength. The method is simple and easy to mass produce, and cost-efficient. DETAILED DESCRIPTION - Preparing a high-performance thermal interface material comprises (1) using a mold to squeeze the three-dimensional porous metal to a certain proportion along the plane (X, Y direction) respectively, making the porous metal form a framework structure that is oriented and closely packed in the direction perpendicular to the plane (Z), (2) heating the chamber of the reaction furnace to the set temperature of 600-1200°C under the protective atmosphere of the carrier gas, (3) adding a porous metal substrate with a close-packed structure along the direction perpendicular to the plane (Z) into the constant temperature zone of the reaction furnace cavity, introducing reducing gas, maintaining temperature for 0-60 minutes, (4) passing into the reaction furnace cavity the mixed atmosphere of carbon source gas, reducing gas and carrier gas, performing catalytic growth of graphene on the surface of a porous metal substrate with an oriented close-packed structure along the direction perpendicular to the plane (Z), where the flow ratio of carbon source gas, reducing gas and carrier gas in the mixed atmosphere is 1:0-80:0-100, and the reaction time is 1-120 minutes, (5) taking out the porous metal substrate after being cooled under the protective atmosphere of the carrier gas, promptly obtaining the graphene thermal conduction network framework structure that grows on the porous metal substrate along the direction perpendicular to the plane direction (Z) oriented close-packed structure, and (6) using a metal etchant to remove the porous metal substrate to obtain porous graphene with an oriented close-packed structure perpendicular to the plane direction (Z), and (7) using vacuum impregnation process to fill the polymer substrate in the porous graphene pores, and complete the curing.