▎ 摘　　要

NOVELTY - Synthesizing reduced nuclei density monocrystalline graphene comprises (i) pre-processing metal copper substrate: electrochemical polishing rectangular thin copper sheet with thickness of 10-50 mu m in phosphoric acid solution, washing using deionized water and rolling, (ii) taking the chemical vapor deposition system and annealing in hydrogen or oxygen atmosphere, and (iii) growing monocrystalline graphene: after finishing annealing, introducing 50-100 scmm 1% methane and 500 sccm hydrogen for growing graphene. USE - The method is useful for synthesizing reduced nuclei density monocrystalline graphene (claimed). ADVANTAGE - The method is suitable for standard industrial production. DETAILED DESCRIPTION - Synthesizing reduced nuclei density monocrystalline graphene comprises (i) pre-processing metal copper substrate: electrochemical polishing rectangular thin copper sheet with thickness of 10-50 mu m in phosphoric acid solution, washing using deionized water for 5-10 times, drying using nitrogen gun, rolling thin copper sheets into a cylindrical opening at two ends of along the width direction using a clean glass rod by means of tweezers, and taking the inner surface growth drum-shaped copper substrate as research object, (ii) annealing metallic copper substrate: taking the chemical vapor deposition system, using hydrogen, heating the system to temperature of 1000-1070 degrees C, vacuumizing until the pressure is 10-30 mTorr, introducing 500 sccm hydrogen, adjusting pressure to 0.5-1 atmospheric pressure, heating the thin copper sheet in the central area of the furnace and carrying out annealing treatment, or using oxygen annealing, firstly vacuumizing the system to 10-30 mTorr, placing the thin copper sheet into the central area of the furnace at room temperature, and heating to 1000-1070 degrees C at rate of 40-60 degrees C/minute, and (iii) growing monocrystalline graphene: after finishing annealing, introducing 50-100 scmm 1% methane and 500 sccm hydrogen for growing graphene.