▎ 摘　　要

NOVELTY - The transistor has a crystal substrate fixed with a wide band gap semiconductor. The crystal substrate is provided with a crystal body. Double-layer or three-layer graphene is formed on a channel deposition metal zinc layer or an indium layer or zinc oxide layer. An indium oxide semiconductor thin film layer is formed on a zinc oxide layer or indium oxide semiconductor film layer. A Schottky electrode is connected with an ohmic electrode that is arranged on the double-layer or three-layer graphene. USE - High mobility transistor for a functional electronic device. ADVANTAGE - The transistor has high conductivity, and realizes radio frequency and microwave frequency section digital logic operation function. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a high mobility transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a high mobility transistor.