• 专利标题:   Gas sensor based on phosphorus pentoxide doped with graphene comprises two metal electrodes set at top part of substrate, phosphorus pentoxide doped graphene set on top part of metal electrodes, substrate that any one of silicon oxide sheet, quartz sheet, ceramic sheet and glass sheet.
  • 专利号:   CN114923962-A
  • 发明人:   PENG H, XU M, CHEN W, SUN M, LI Q
  • 专利权人:   UNIV GUANGXI NORMAL
  • 国际专利分类:   C01B032/194, G01N027/12
  • 专利详细信息:   CN114923962-A 19 Aug 2022 G01N-027/12 202283 Chinese
  • 申请详细信息:   CN114923962-A CN10526740 16 May 2022
  • 优先权号:   CN10526740

▎ 摘  要

NOVELTY - Gas sensor based on phosphorus pentoxide doped with graphene comprises phosphorus pentoxide doped graphene (1), two metal electrodes (2) and a substrate (3). Two metal electrodes are set at the top part of the substrate. The phosphorus pentoxide doped graphene is set on the top part of the metal electrodes. The substrate is any one of silicon oxide sheet, quartz sheet, ceramic sheet and glass sheet. USE - Gas sensor based on phosphorus pentoxide doped with graphene used in industrial mass production of gas molecules. Can also be used in chemical vapor deposition (CVD) system. ADVANTAGE - The gas sensor: has fast response rate; is easy to reach the saturation; has fast desorption, and good repeatability; can work at normal temperature; and has high controllability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a preparation method of the gas sensor based on phosphorus pentoxide-doped with graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the gas sensor based on phosphorus pentoxide doped with graphene. 1Phosphorus pentoxide doped graphene 2Metal electrode 3Substrate