• 专利标题:   Graphite flake growth of graphene composite carbon material by removing impurities on graphite flake surface, heating graphite flake, maintaining temperature, introducing methane gas for carbon source and growing graphene.
  • 专利号:   CN110342502-A
  • 发明人:   OUYANG Q, WANG C
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   C01B032/186, C01B032/21
  • 专利详细信息:   CN110342502-A 18 Oct 2019 C01B-032/186 201988 Pages: 8 Chinese
  • 申请详细信息:   CN110342502-A CN10561533 26 Jun 2019
  • 优先权号:   CN10561533

▎ 摘  要

NOVELTY - Method for graphite flake in-situ growth of graphene composite carbon material involves (i) removing impurities on the surface of a graphite flake, (ii) heating the graphite flake at a set temperature in an environment atmosphere of argon gas and hydrogen gas at the same time and maintaining temperature for a period of time to further reduce and remove impurities on the surface of the graphite flake and (iii) introducing a methane gas to provide a carbon source required for the growth of graphene and growing graphene to obtain the carbon material. USE - The method is useful for graphite flake in-situ growth of graphene composite carbon material. ADVANTAGE - The method adopts simple process, can grow a large amount of graphene on the surface of the graphite flake without using a catalyst, can control growth morphology of graphene, requires only to change the flow rate and the growth time of various gases and is convenient to regulate and control.