• 专利标题:   Preparing single crystal graphene, comprises preparing single crystal graphene by chemical vapor deposition process, forming graphene nucleus on the substrate, and forming single crystal graphene on basis of graphene core.
  • 专利号:   CN113622024-A, CN113622024-B
  • 发明人:   WANG Y, LI Y, SUN L, LIU H, LIU Z
  • 专利权人:   UNIV PEKING, BEIJING GRAPHENE INST
  • 国际专利分类:   C30B025/00, C30B029/02
  • 专利详细信息:   CN113622024-A 09 Nov 2021 C30B-029/02 202104 Chinese
  • 申请详细信息:   CN113622024-A CN10380747 08 May 2020
  • 优先权号:   CN10380747

▎ 摘  要

NOVELTY - Preparing single crystal graphene, comprises preparing single crystal graphene by a chemical vapor deposition process; where chemical vapor deposition process comprising In a reaction system that does not contain reducing gas, forming a graphene nucleus on the substrate, and (ii) under the action of reducing gas, and forming single crystal graphene on basis of graphene core. USE - The method is useful for preparing single crystal graphene. ADVANTAGE - The method achieves consistent orientation. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a single crystal graphene prepared by the method.