• 专利标题:   Forming graphene film on one or more surfaces of metal substrate involves heating metal substrate defining one or more surfaces to exposure temperature, and restricting metal flux from one or more surfaces at the exposure temperature.
  • 专利号:   WO2014033282-A1, EP2890634-A1, US2015225844-A1
  • 发明人:   VAN BAARLE D, VAN RIJN R
  • 专利权人:   RIJKSUNIV LEIDEN, RIJKSUNIV LEIDEN, RIJKSUNIV LEIDEN
  • 国际专利分类:   C01B031/04, C23C016/26, C23C016/458, C23C016/46, C23C016/52
  • 专利详细信息:   WO2014033282-A1 06 Mar 2014 C01B-031/04 201419 Pages: 51 English
  • 申请详细信息:   WO2014033282-A1 WOEP068033 30 Aug 2013
  • 优先权号:   GB015579, US695522P

▎ 摘  要

NOVELTY - Forming a graphene film on one or more surfaces of a metal substrate, involves: (i) heating a metal substrate defining one or more surfaces to an exposure temperature; (ii) restricting the metal flux from one or more surfaces at the exposure temperature by provision of one or more counter surfaces proximal to one or more of the surfaces of the substrate; and (iii) exposing the substrate to a carbon containing precursor gas at the exposure temperature so as to form a graphene film on the or each surface of the substrate. USE - The method is useful for forming graphene film on one or more surfaces of metal substrate (claimed). ADVANTAGE - Methods are provided for producing a large area of continuous graphene, and for producing graphenes of reliable and/or substantially predictable surface relief, a relatively low and/or uniform nucleation density and well aligned lattices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an arrangement for forming a graphene film on one or more surfaces of a metal substrate, the arrangement comprising: (a) a metal substrate defining one or more surfaces; (b) a heat source to heat the metal substrate to an exposure temperature; (c) one or more counter surfaces provided proximal to one or more of the surfaces of the substrate to restrict the metal flux from one or more surfaces at the exposure temperature; and (d) a carbon containing precursor gas source to expose the substrate to a carbon containing precursor gas at the exposure temperature so as to form a graphene film on the or each surface of the substrate.