• 专利标题:   Rectifier element i.e. tunnel diode, has insulating layer formed on predetermined domain of flat-shaped electrode that is made of metal, semiconductor or graphene, and another electrode fixed in insulating layer along longitudinal direction.
  • 专利号:   KR1458566-B1, US2014346558-A1, US9425329-B2
  • 发明人:   JANG J E, SHIN J H
  • 专利权人:   DAEGU GYEONGBUK INST SCI TECHNOLOGY, DAEGU GYEONGBUK INST SCI TECHNOLOGY
  • 国际专利分类:   H01L029/88, H01L029/66, H01L029/06, H01L029/16, H01L029/861
  • 专利详细信息:   KR1458566-B1 07 Nov 2014 H01L-029/88 201477 Pages: 12
  • 申请详细信息:   KR1458566-B1 KR057073 21 May 2013
  • 优先权号:   KR057073

▎ 摘  要

NOVELTY - The element has an insulating layer formed on a predetermined domain of a flat-shaped electrode. Another flat-shaped electrode is fixed in the insulating layer along longitudinal direction. The former electrode is made of metal, semiconductor or graphene. The latter electrode is made of nanotube or nanowire. A main body is provided with a ring-shaped, square-shaped, rectangular-shaped or elliptical-shaped cross-section. The nanotube is a carbon nanotube, a metal nanotube or semi-conductive nanotube. The nanowire is a metal nanowire or semiconducting nanowire. USE - Rectifier element i.e. tunnel diode. ADVANTAGE - The electrode is made of nanotube or nanowire so as to increase flow of current and operate the element in a super high frequency band. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a rectifier element. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a rectifier element.