• 专利标题:   X-ray penetration analysis method, involves forming graphene film layer on surface of chamber, detecting humidity condition and temperature of chamber by using detecting apparatus, and removing part of substrate during etching process.
  • 专利号:   KR2016006637-A
  • 发明人:   SEUNG H H
  • 专利权人:   KOREA INST CERAMIC ENG TECHNOLOGY
  • 国际专利分类:   G01N001/36, G01N001/44, G01N023/00, G01N023/02, G01N023/20
  • 专利详细信息:   KR2016006637-A 19 Jan 2016 G01N-023/00 201621 Pages: 24 English
  • 申请详细信息:   KR2016006637-A KR182875 21 Dec 2015
  • 优先权号:   KR068883, KR182875

▎ 摘  要

NOVELTY - The method involves forming a graphene film layer on a surface of a chamber. X-ray analysis equipment is provided with the chamber. A detecting apparatus is connected with a collimated beam X-ray irradiation equipment. Graphene is placed in X-ray path. Humidity condition and temperature of the chamber are detected by the detecting apparatus. X-ray is penetrated through the Graphene. A part of a substrate is removed during etching process. A peak center of a standard graphene crystal plane is provided with a Miller index. USE - X-ray penetration analysis method. ADVANTAGE - The method enables increasing reliability and product competitiveness of finished product. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating an x-ray penetration analysis method. '(Drawing includes non-English language text)'