▎ 摘　　要

NOVELTY - The module has a conductive base plate (14) connected with a semiconductor chip (12). A first graphene layer (32) is arranged between the semiconductor chip and the conductive base plate, where the first graphene layer is in electrical and thermal contact with a side of the base plate. A second graphene layer (20) is formed on an opposite side of the conductive base plate, where thickness of the first graphene layer is in range 1-10 nm. A metallic layer (34) with low melting point is arranged between the semiconductor chip and the first graphene layer. The metallic layer comprises a metal or metal alloy layer. USE - Semiconductor power module for semiconductor chip or die for use in high voltage applications such as in power transmission or distribution systems. ADVANTAGE - The module reduces power losses and overall system cost to ensure power density, thus facilitating compact converter design. The module increases reliability of entering a short-circuit failure mode. The graphene layers ensure thermal conductivity properties. The module increases thermal management in normal continuous operation of a semiconductor chip. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a semiconductor chip. Semiconductor chip (12) Conductive base plate (14) Graphene layers (20,32) Metallic layer (34)