▎ 摘　　要

NOVELTY - The device has a sealing cabinet (2) that is set in a vacuum chamber (1). A heater roller wheel (4) is set in a substrate channel winding base. A heater (5) is installed in the vacuum chamber. A reaction chamber (6) is provided with connected air inlet mechanism. A vacuum pump (8) is set in a reaction chamber for providing a vacuum reaction condition. A gas inlet mechanism is arranged for providing graphene growth reaction gas into the reaction chamber. USE - High-temperature continuous graphene growing device. ADVANTAGE - The device provides stable growth of graphene, and balances chemical vapor deposition in large area to realize large-scale preparation of the graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene growing device. Vacuum chamber (1) Sealing cabinet (2) Heater roller wheel (4) Heater (5) Reaction chamber (6) Vacuum pump (8)