• 专利标题:   Electronic device such as optical device, has graphene layer that includes multiple nanocrystal graphenes and multiple graphene protrusions and graphene layer is covered by semiconductor layer.
  • 专利号:   US2015332920-A1, KR2015133088-A, US9685516-B2
  • 发明人:   SHIN H, KIM S, LEE K, PARK H, CHO E, CHO E B, KIM S W, LEE K H, PARK H J, SHIN H J
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND, SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   H01L021/02, H01L021/324, H01L029/267, H01L021/20, H01L029/16, H01L029/66, H01L029/786, H01L031/028
  • 专利详细信息:   US2015332920-A1 19 Nov 2015 H01L-021/02 201579 Pages: 14 English
  • 申请详细信息:   US2015332920-A1 US657306 13 Mar 2015
  • 优先权号:   KR059966

▎ 摘  要

NOVELTY - The electronic device has a substrate and a graphene layer that is placed on the substrate (30). A semiconductor layer (50) covers the graphene layer which includes multiple nanocrystal graphenes and multiple graphene protrusions (40). A side surface of multiple graphene protrusions is uneven. Multiple graphene protrusions comprise multiple nanocrystal graphenes. The heights of multiple graphene protrusions are different from each other. USE - Electronic device such as optical device, photodetector or a solar cell. ADVANTAGE - The electricity consumption is reduced, since molybdenum disulfide is easily switched from an ON state to an OFF state. The thickness of the semiconductor layer is greater than a height of the highest graphene protrusion. The current efficiency of the electronic device is higher than the current efficiency of conventional electronic device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of manufacturing an electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view illustrating an electronic device with an increased graphene-semiconductor junction region. Substrate (30) Graphene protrusion (40) Semiconductor layer (50) First electrode (52) Second electrode (54)