▎ 摘　　要

NOVELTY - Multi-chamber semiconductor thin film epitaxy device (001) comprises a growth chambers and a robotic arm (401), where the growth chambers comprise at least one graphene growth chamber (201) and at least one semiconductor material growth chamber (101, 301), where the graphene growth chamber is used to grow a graphene film on a substrate, and comprises a plasma processing module for generating plasma gas, and at least one semiconductor material growth chamber is used for van der Waals epitaxial semiconductor thin film on the graphene film, and different semiconductor material growth chambers are used for growing different semiconductor thin films, and the robotic arm is used to transfer samples between the growth chambers. The graphene growth chamber comprises a reaction chamber, which is arranged in the growth chamber center and is supported and fixed by a supporting column, and an induction heating coil is wound around the reaction chamber to provide high temperature environment. USE - Multi-chamber semiconductor thin film epitaxy device. ADVANTAGE - The device solves the problem of contamination of the semiconductor material by the residual gas of the graphene reaction when the semiconductor material is epitaxially on the graphene in single chamber, and is conducive to simplifying the design of the growth chamber, and improves material growth efficiency and process repeatability, increases the growth rate of graphene, and reduces production cost. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of a multi-chamber semiconductor thin film epitaxy device. Multi-chamber semiconductor thin film epitaxy device (001) Semiconductor material growth chamber (101) Graphene growth chamber (201) Robotic arm (401)