• 专利标题:   Transverse arrangement of multi-chamber graphene continuous growth device comprises a discharging cooling cavity, cooling cavity and a vacuum pump for vacuumizing the discharging cooling cavity and cooling cavity.
  • 专利号:   CN106829935-A, CN206858175-U
  • 发明人:   DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y
  • 专利权人:   CHONGQING GRAPHENE TECH CO LTD, CHONGQING GRAPHENE TECH CO LTD
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN106829935-A 13 Jun 2017 C01B-032/186 201751 Pages: 9 Chinese
  • 申请详细信息:   CN106829935-A CN10186754 27 Mar 2017
  • 优先权号:   CN10186754, CN20306892

▎ 摘  要

NOVELTY - Transverse arrangement of multi-chamber graphene continuous growth device comprises a discharging cooling cavity (1), cooling cavity (4) and a vacuum pump (7) for vacuumizing the discharging cooling cavity and cooling cavity, The discharging cooling cavity is provided a graphene growth substrate feeding roller (11) and discharging cooling zone guide roller (12). The material cooling cavity is provided a grapheme substrate rolling material roller and cooling cavity guide roller. USE - Used as transverse arrangement of multi-chamber graphene continuous growth device. ADVANTAGE - The device ensures the graphene film quality. DETAILED DESCRIPTION - Transverse arrangement of multi-chamber graphene continuous growth device comprises a discharging cooling cavity (1), cooling cavity (4) and a vacuum pump (7) for vacuumizing the discharging cooling cavity and cooling cavity, The discharging cooling cavity is provided a graphene growth substrate feeding roller (11) and discharging cooling zone guide roller (12). The material cooling cavity is provided a grapheme substrate rolling material roller and cooling cavity guide roller. The guide roller further comprises the first high temperature cavity, the second high temperature technology cavity and a transition cavity. The first high temperature technology cavity of two ends and two sides of second high temperature process chamber are provided with uniform heat insulating device. The first high temperature technology cavity and the second high temperature technology cavity are provided with a heater. The first high temperature technology cavity and transition cavity and the second high temperature technology cavity are transversely arranged. The tension of the tension detecting device and the transition cavity is connected with detecting grapheme growth substrate. The first high temperature technology cavity with one end is connected with discharging cooling cavity. The other end is connected with the transition cavity. The second high temperature technology cavity with one end is connected with the transition cavity. The other end is connected with receiving cooling cavity. The graphene growth substrate feeding roller is connected with discharging graphene growth substrate orderly passes through the discharging cooling zone guide roller. The first high temperature technology cavity is connected with transition cavity. The second high temperature technology cavity is connected with cooling cavity guide roller and the grapheme substrate rolling is provided the material roller. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the transverse arrangement of multi-chamber graphene continuous growth device. Discharging cooling cavity (1) Cooling cavity (2) Vacuum pump (7) Feeding roller (11) Guide roller (12)