▎ 摘　　要

NOVELTY - An inclined magnetic tunnel junction memory based on bismuth-doped lithium atom substrate comprises a top electrode set from up to down sequentially sequentially SOT-MTJ and a substrate, where the top electrode comprises a reference layer, a tunnelling layer, a heavy metal layer and a free layer arranged sequentially from top to bottom. The substrate is a structure for doped lithium atoms and graphene doped with the lithium junction of the atom. USE - Inclined magnetic tunnel junction memory for reading magnetic head of computer hard disk, magnetic random access memory (MRAM), and different magnetic sensors. ADVANTAGE - The substrate of the memory uses the structure of the Bi2Se3 and the graphene doped with the different junction of the lithium, compared with the un-doped graphene the transmission coefficient of the substrate is improved. The transmission coefficient is different when the surface of lithium graphene graphene. It can realize two logic of 0 and 1. In addition, applying magnetic field deflection outside the device also can further change the transmission coefficients of substrate, which can solve the problem that the magnetic random memory in the existing technology has small spin Hall angle, bad stability and cannot realize the reading and writing separation. By replacing the doping method, the doping agent containing the lithium atoms is doped in the graphene lattice, so as to realize the doping inside the graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the data writing method of inclined magnetic tunnel junction memory based on BiSe-doped lithium substrate. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of an inclined magnetic tunnel junction memory. (Drawing includes non-English language text).