▎ 摘　　要

NOVELTY - A semiconductor is processed by delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber; generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber; forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber, where substrate is maintained at a temperature below or about 600degrees Celsius; and halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor. USE - The method is useful for processing semiconductor. ADVANTAGE - By forming a less restrained layer of graphene, lower temperatures may be used to form the graphene. Additionally, plasma enhancement may be used to facilitate breakdown proximate the substrate. This may advantageously allow formation not only on metals, but also on dielectric materials, which may otherwise be incapable of supporting graphene growth due to the thermal budget of the dielectric material. By utilizing process flows that may allow formation of the graphene layers on metal, the method may afford graphene deposition at low substrate temperatures, which may also be performed in a plasma-free environment.