▎ 摘　　要

NOVELTY - A preparation of a resistance change memory in the semiconductor field, involves (S1) adding cadmium sulfate and oxalic acid into N,N-dimethylformamide, ultrasonically stirring, and then moving to a high-pressure reaction in the kettle, filtering and drying to obtain crystal metal-organic framework, (S2) adding the polymer polyvinyl alcohol, polymethyl methacrylate and polystyrene to N,N-dimethylformamide, and then stirring to fully dissolve, then adding graphene oxide and the crystalline metal-organic framework prepared in step (S1), setting aside, (S3) ultrasonically cleaning the square conductive glass in acetone, anhydrous ethanol and deionized water, and then drying in a vacuum drying oven, then placing on the spin coater, and then adding the mixture in step (S2) dropwise for spin coating, and drying, and (S4) placing the conductive glass coated with the base film in step (S3) on a spin coater, and then spin-coating a metal silver electrode layer on the base film. USE - Preparation of resistance change memory in semiconductor field. ADVANTAGE - The method provides resistance-change memory with high electric mobility, and a smaller radius, which endows the resistance change memory with a lower set voltage. The method uses three polymers (polyvinyl alcohol, polymethyl methacrylate and polystyrene) as matrix material, so that the resistance- change memory has better flexibility performance, at the same time, has a low set voltage and high flexibility performance. DETAILED DESCRIPTION - A preparation of a resistance change memory in the semiconductor field, involves (S1) adding cadmium sulfate (CdSO4 asterisk 7H2O) and oxalic acid into N,N-dimethylformamide, ultrasonically stirring for 10-16 minutes, and then moving to a high-pressure reaction in the kettle, reacting at 550-580degrees Celsius for 3-4 days, lowering the temperature to room temperature at a cooling rate of 5-6degrees Celsius/hour, filtering and drying to obtain crystal metal-organic framework (MOF), (S2) adding the polymer polyvinyl alcohol, polymethyl methacrylate and polystyrene to N,N-dimethylformamide, and then stirring at room temperature to fully dissolve, then adding graphene oxide and the crystalline metal-organic framework prepared in step (S1), maintaining the mass ratio of polymer, N,N-dimethylformamide and crystal metal-organic framework prepared in step (S1) to (1-2.6):(0.12-0.20):(0.11-0.19), and raising the temperature to 80-95degrees Celsius, continuing to stir for 2-5 hours, setting aside, (S3) ultrasonically cleaning the square conductive glass in acetone, anhydrous ethanol and deionized water for 30-50 minutes, and then drying in a vacuum drying oven, then placing on the spin coater at a rotational speed of 3800-4500 rpm, and then adding the mixture in step (S2) dropwise for spin coating, and drying at 90-96degrees Celsius, and (S4) placing the conductive glass coated with the base film in step (S3) on a spin coater, and then spin-coating a metal silver electrode layer on the base film.