• 专利标题:   Graphene-carbon nanotube structure for refinement of wiring in semiconductor device, has substrate, base formed on substrate, vertical graphene which grows from base, and stands in vertical direction with respect to substrate surface.
  • 专利号:   WO2014038243-A1, JP2014051413-A, TW201410598-A
  • 发明人:   KAWABATA A
  • 专利权人:   NAT INST ADVANCED IND SCI TECHNOLOGY, DOKURITSU GYOSEI HOJIN SANGYO GIJUTSU SO
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B031/02, H01L021/28, H01L021/285, H01L021/336, H01L029/417, H01L029/78, C01B031/04
  • 专利详细信息:   WO2014038243-A1 13 Mar 2014 C01B-031/02 201421 Pages: 20 Japanese
  • 申请详细信息:   WO2014038243-A1 WOJP062501 26 Apr 2013
  • 优先权号:   JP197324

▎ 摘  要

NOVELTY - A graphene-carbon nanotube structure has a substrate (1), a base (2) formed on top of the substrate, vertical graphene (4) which grows from the base, and stands in a vertical direction with respect to the surface of substrate, and is superimposed densely, and carbon nanotube which grows from the base and is integrally formed from the lower end of vertical graphene in upper end. USE - Graphene-carbon nanotube structure is used for refinement of wiring in semiconductor device. ADVANTAGE - The graphene-carbon nanotube structure has excellent reliability, and high density. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of graphene-carbon nanotube structure, which involves forming base on top of substrate, growing vertical graphene with respect to base surface, and growing carbon nanotube connected successively in the lower end and upper end of vertical graphene. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic sectional view explaining the manufacturing method of graphene structure. Substrate (1) Base (2) Layers (2a,2b) Horizontal graphene (3) Vertical graphene (4)