• 专利标题:   Preparing continuous single-layer single-crystal graphene film comprises electrochemically polishing the single crystal copper, then further performing graphene growth on the single crystal copper substrate.
  • 专利号:   CN110699749-A, CN110699749-B
  • 发明人:   WU B, ZHANG J, LIU Y
  • 专利权人:   CHINESE ACAD SCI CHEM INST
  • 国际专利分类:   C25F003/22, C30B025/18, C30B029/02
  • 专利详细信息:   CN110699749-A 17 Jan 2020 C30B-025/18 202019 Pages: 11 Chinese
  • 申请详细信息:   CN110699749-A CN10744460 09 Jul 2018
  • 优先权号:   CN10744460

▎ 摘  要

NOVELTY - Preparing continuous single-layer single-crystal graphene film comprises electrochemically polishing the single crystal copper to obtain a single crystal copper substrate, further performing graphene growth on the single crystal copper substrate to obtain final product. USE - The method is useful for preparing continuous single-layer single-crystal graphene film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for continuous single-layer single-crystal graphene film obtained by above method.