▎ 摘　　要

NOVELTY - The method comprises forming a growth mask on a metal catalyst layer, and growing graphene on a portion of metal catalyst layer, which is not masked by the growth mask. The growth mask is a silicon oxide film or an array of silica nanospheres. The step of forming the growth mask comprises arranging the silica nanospheres on the metal catalyst layer, and annealing the metal catalyst layer so that each silica nanospheres is recessed to a predetermined depth into the surface of the metal catalyst layer. The method further comprises removing the growth mask from the metal catalyst layer. USE - The method is useful for forming graphene, which is useful in the manufacture of electronic device (claimed) including a semiconductor device, a flexible device, a transparent electrode and a sensor. ADVANTAGE - The method is capable of forming the graphene with desired mesh structure, and improved electrical characteristics. DETAILED DESCRIPTION - The method comprises forming a growth mask on a metal catalyst layer, and growing graphene on a portion of metal catalyst layer, which is not masked by the growth mask. The growth mask is a silicon oxide film or an array of silica nanospheres. The step of forming the growth mask comprises arranging the silica nanospheres on the metal catalyst layer, and annealing the metal catalyst layer so that each silica nanospheres is recessed to a predetermined depth into the surface of the metal catalyst layer. The method further comprises removing the growth mask from the metal catalyst layer, and doping the graphene with a dopant material, before or after the growth mask is removed. An INDEPENDENT CLAIM is included for a method for manufacturing an electronic device.