▎ 摘　　要

NOVELTY - The method involves placing the copper foil in the gas phase deposition furnace. The argon gas is introduced into the gas phase deposition furnace. The gas phase deposition furnace is heated to the temperature of 1000-1080 degrees centigrade. The hydrogen is introduced into the gas phase deposition furnace and the copper foil is annealed. The temperature of the gas phase deposition furnace is maintained at 1000-1080 degrees centigrade. The methane is introduced into the gas phase deposition furnace. The access amount of the hydrogen is reduced, and the growth process is started. The growing process is continued. The introducing of methane is stopped after finishing growing process. The power supply of the gas phase deposition furnace is closed. The gas phase deposition furnace is naturally cooled to the room temperature under the atmosphere of hydrogen and argon gas. USE - Method for preparing single-layer alternating graphene. ADVANTAGE - The method enables to prepare single-double-layer alternating graphene superlattice, which is simple, and easy to realize and control, and has no residue of organic chemical reagent, and obtains graphene the patterned thin film with clean surface. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation illustrating a method for preparing single-layer alternating graphene. (Drawing includes non-English language text).