▎ 摘　　要

NOVELTY - The method involves coating graphite alkene on a surface of a substrate. A silicon nitride layer is formed on a photo-resist graphene part to carry out photo-resist process. Photo-resist acetone leaching part removing process is performed by using hydrofluoric acid. Photo-resist graphene removing process is performed. Silicon nitride layer gas phase deposition process is performed to maintain silicon nitride growth temperature for 100 to 150 degree centigrade. Thickness of the silicon nitride layer is about 50 to 200nm. Hydrofluoric acid soaking process is performed. USE - Photo-resist graphene removing method. ADVANTAGE - The method enables realizing photo-resist graphene removing operation in an effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a photo-resist graphene removing method. '(Drawing includes non-English language text)'