▎ 摘　　要

NOVELTY - The structure has a substrate (1). A nitride nucleation layer (2) is provided on the substrate. A nitride layer (3) is arranged on the nitride nucleation layer. A N-type nitride layer (4) is arranged on the nitride layer. A multi-quantum well layer (5) is arranged on the N-type nitride layer. P-type aluminum gallium nitride layers (6) are arranged on the multi-quantum well layer. A graphene layer (7) is provided between two adjacent P-type aluminum gallium nitride layers. A P-type gallium nitride layer (8) is arranged on the P-type aluminum gallium nitride layer. USE - Epitaxial structure for LED. ADVANTAGE - The graphene layer is grown on the P-type aluminum gallium nitride layer, which effectively improves the current expansion ability, reduces the series voltage, and improves the electrical injection efficiency of the LED. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing the epitaxial structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the epitaxial structure for LED. Substrate (1) Nitride nucleation layer (2) Nitride layer (3) N-type nitride layer (4) Multi-quantum well layer (5) P-type aluminum gallium nitride layer (6) Graphene layer (7) P-type gallium nitride layer (8)