• 专利标题:   Liquid-phase substrate separation of graphene by taking silicon chip or glass as deposition substrate, ultrasonically cleaning surface using organic solvent, cold-air drying, coating dimethicone, and adding graphite oxide particles.
  • 专利号:   CN110562968-A
  • 发明人:   QIAO X, DING H
  • 专利权人:   HANGZHOU LIANFANG TECHNOLOGY CO LTD
  • 国际专利分类:   C01B032/192, C01B032/194
  • 专利详细信息:   CN110562968-A 13 Dec 2019 C01B-032/192 202003 Pages: 4 Chinese
  • 申请详细信息:   CN110562968-A CN11003312 22 Oct 2019
  • 优先权号:   CN11003312

▎ 摘  要

NOVELTY - Liquid-phase substrate separation of graphene comprises taking silicon chip or glass as deposition substrate, ultrasonically cleaning substrate surface using organic solvent, cold-air drying, uniformly coating dimethicone on surface of substrate, setting coated sample in deposition position, adjusting height of graphene preparation system , adding graphite oxide particles into graphene preparation system, starting graphene preparation system, microwave irradiating to form desired graphene, collecting graphene, quickly stripping graphene film in vacuum chamber at constant temperature. USE - The method is for liquid-phase substrate separation of graphene. ADVANTAGE - The method is capable of depositing high-quality graphene thin film in large area, reduces occurrence of agglomeration graphene and greatly improves specific surface area.