▎ 摘　　要

NOVELTY - Transistor comprises a source electrode, a drain electrode, at least one graphene (200) having non-coplanar surface with the drain electrode, connected to the source electrode, a selectively etching type insulating material layer provided on lower portion of the graphene, at least one piezo material provided on etched location of the insulating material layer and lower portion of the graphene, and a barrier regulating circuit (600) intersected with a circuit of the at least one graphene, provided on lower surface of the piezo material. USE - The transistor is useful as graphene single-electron transistor and graphene electron tunneling transistor for adjusting on/off of electricity in central processing unit, memory and battery of electronic devices and electrical component by mounting in form of one-dimensional, two-dimensional and three-dimensional (all claimed). ADVANTAGE - The transistor has processing speed faster than regular transistor. DETAILED DESCRIPTION - Transistor comprises either a source electrode, a drain electrode, at least one graphene (200) having non-coplanar surface with the drain electrode, connected to the source electrode, a selectively etching type insulating material layer provided on lower portion of the graphene, at least one piezo material provided on etched location of the insulating material layer and lower portion of the graphene, and a barrier regulating circuit (600) intersected with a circuit of the at least one graphene, provided on lower surface of the piezo material; the source electrode, the drain electrode, the graphene, the insulating material layer having a physical intervals with the graphene, and at least one electric charged particles provided on lower surface of the graphene; or the source electrode, the drain electrode, the graphene, the insulating material layer having a physical intervals with the graphene, and at least one magnetic particle (100, 110) provided on lower surface of the graphene, where the transistor: is provided with at least one bending deformation of graphene due to voltage or electrostatic attraction of the barrier regulating circuit intersected with circuit of the at least one graphene, at least one piezo material, the electric charged particles, the magnetic particle; and regulates on/off of electricity by adjusting height of fermi level of the graphene between the drain electrode and the at least one graphene. INDEPENDENT CLAIMS are also included for: (1) graphene single-electron transistor comprising the source electrode, the drain electrode, the graphene, the insulating material layer, and a common electrode island connected to deformation free layer and the insulating layer, connected via the tunnel junction and the drain electrode, the insulating material layer, the piezo material, the barrier adjustment circuit, where the single-electron transistor is provided with at least one bending deformation of graphene due to voltage of the barrier regulating circuit intersected with circuit of the at least one graphene by tunneling electron in electrode island, positioning the tunnel to the drain electrode, and regulating fermi level of the drain electrode, where single-electron transistor is provided in two electrodes forms made of graphene, coupled to the insulating layer and drain electrode by connecting through tunnel junction on the common electrode island; and (2) graphene electron tunneling transistor comprising the source electrode, the drain electrode, the graphene, a deformation free layer, the insulating layer, the selectively etched insulating material layer, the piezo material, the barrier regulating circuit DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the transistor. Magnetic particles (100, 110) Graphene (200) Electrically conductive material (300) Barrier regulating circuit (400) Air layer (600)