▎ 摘　　要

NOVELTY - Processing of silicon chip surface for in-situ graphene growth, involves immersing a clean silicon wafer in hydrofluoric acid aqueous solution, taking out the silicon wafer, washing with deionized water, drying, immersing in 0.05-0.2 M alcohol solution of phenol derivative, taking out the silicon wafer, rinsing with anhydrous alcohol, and drying. USE - Processing of silicon chip surface for in-situ graphene growth. ADVANTAGE - The method reduces the contact angle of the surface of silicon wafer, provides nucleation sites for growth of graphene, enables preparation of large-area graphene, and is simple.