▎ 摘　　要

NOVELTY - The method of preparing gallium nitride nanostructure array, involves covering monolayer or multilayer graphene film, after the substrate is cleaned, placing the substrate coated with graphene film in chemical vapor deposition tube furnace growth system, growing gallium nitride buffer layer at low temperature, heating at high temperature to obtain gallium nitride nano arrays. The substrate is selected from sapphire, silicon, quartz glass or gallium nitride/sapphire (silicon). USE - Method of preparing gallium nitride nanostructure array (claimed). DETAILED DESCRIPTION - Method of preparing gallium nitride nanostructure array, involves carrying out sublimation process of graphene intercalation layer and low temperature gallium nitride buffer layer using chemical vapor deposition apparatus. The specific process is carried out by covering monolayer or multilayer graphene film, after the substrate is cleaned, placing the substrate coated with graphene film in chemical vapor deposition tube furnace growth system, growing gallium nitride buffer layer at low temperature, heating at high temperature to obtain gallium nitride nano arrays. The substrate is selected from sapphire, silicon, quartz glass or gallium nitride/sapphire (silicon). The growth temperature of buffer layer is maintained at 500-1000 degrees C. The growth temperature of nanowire array is maintained at 1000-1150 degrees C. The carrier gas is high purity nitrogen at gas flow rate of 0.5-5 slm.