• 专利标题:   Preparing manganese(II) sulfide nano-dot material comprises e.g. dispersing zinc salt, aluminum salt and graphene oxide in solvent, dissolving chelating agent, manganese salt and sulfur-containing additive in solvent, and converting mixed solution to polytetrafluoroethylene to hydrothermally react.
  • 专利号:   CN115557537-A
  • 发明人:   LI G, LIN H, FAN X, LI S
  • 专利权人:   HUNAN ZHONGDA NONFERROUS METALS METALLUR, UNIV CENT SOUTH
  • 国际专利分类:   B82Y030/00, B82Y040/00, C01B032/05, C01G045/00, C01G053/00, C07C051/41, C07C059/265, H01M010/054, H01M004/505, H01M004/525, H01M004/62
  • 专利详细信息:   CN115557537-A 03 Jan 2023 C01G-045/00 202314 Chinese
  • 申请详细信息:   CN115557537-A CN11044870 30 Aug 2022
  • 优先权号:   CN11044870

▎ 摘  要

NOVELTY - Preparing manganese(II) sulfide (MnS) nano-dot material comprises (i) dispersing zinc salt, aluminum salt and graphene oxide in a solvent to obtain solution A, dissolving a chelating agent, manganese salt and sulfur-containing additive in solvent, and adjusting the pH value to 5-7 to obtain solution B, (ii) dripping solution B into the solution A, and adjusting pH value to 8-10 to obtain a mixed solution, and (iii) converting the mixed solution to polytetrafluoroethylene for hydrothermally reacting, completely reacting to obtain nano-dot precursor, sintering nano-dot precursor at a high temperature, and then etching by using acid solution to obtain the finished product. USE - The method is useful for preparing manganese(II) sulfide nano-dot material. ADVANTAGE - The material: has uniformly distributed nano-dots, and complete structure; and improves the conductivity and ion transmission rate of the electrode material. The method: is simple; has short process, and easy-to-obtain raw materials; does not produces no toxic and harmful substances; is easy to realize large-scale production; utilizes nano-dot materials to modify the ternary sodium electrical precursor; does not generate surface by-products; and improves the electrochemical performance of the material. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: a MnS nano-dot material prepared by the above-mentioned method, where the material has a hydrotalcite-shaped structure comprising a carbon material substrate and MnS nano-dots loaded on the carbon material substrate; a ternary sodium electric precursor material, comprising a ternary precursor matrix and MnS nano-dot materials coated on the surface of the ternary precursor matrix, where the mass ratio of the MnS dot material and ternary precursor is 0.1-10:100; preparing the ternary sodium electric precursor material, comprising (a) dissolving stoichiometric manganese salt, sodium salt, and doped metal salt in a solvent, adding citric acid, and fully reacting until a mixture is formed, where the doping metal salt is a salt of N, and N comprises iron, nickel, cobalt and/or copper, and (b) adding the MnS nano-dot material into the mixture, uniformly stirring and then drying to obtain the finished product; and a ternary sodium electric anode material obtained by sintering the ternary sodium electrical precursor material at high temperature.