▎ 摘　　要

NOVELTY - The manufacturing method involves providing a pure copper with 25 micrometer thick and a pure copper with 9 micrometer thick. A graphene is synthesized in a low-pressure deposition system. A copper substrate is heated up to 1030 degrees C under hydrogen and methane is introduced to grow the graphene. A sample is synthesized with SLG and multilayer graphene by controlling the cooling rate of the copper substrate to room temperature within 20 minutes, and cooling time is 10 hours. The copper of the sample is annealed with same heating and cooling as the SLG synthesis, without methane addition. USE - Manufacturing method of graphene-copper-graphene heterogeneous film. ADVANTAGE - The manufactured graphene-copper-graphene heterogeneous film is provided with enhanced thermal conductivity. The graphene-copper-graphene heterogeneous film improves thermal management of advanced electronic chips. DESCRIPTION OF DRAWING(S) - The drawing shows the flow chart of a method of making a graphene-copper-graphene heterogeneous film.