▎ 摘　　要

NOVELTY - The device has a discharging cavity (101) provided with a discharging roller. A receiving cavity (103) is provided with a receiving roller (104). A high temperature cavity (105) is arranged between the discharging cavity and the receiving cavity. An inner part of the high temperature cavity is provided with a carrier (106). An upper part of the carrier is provided with a finite field baffle. A limiting baffle and the carrier are used to form a slit (108). The limiting baffle is adjacent to the discharging cavity. The slit and the carrier are extended to the receiving cavity by the discharging cavity. An extending length of the slit is 30% to 60% of the extending length of the carrier. A lower part of the carrier is provided with a heater (109). USE - Divided-area type graphene preparation device. ADVANTAGE - The method enables separating the substrate pre-processing area and the high temperature growth area of the graphene film, so that the pre-treatment and high temperature can be carried out at the same time. The limiting baffle divides the carrier into the area set with the finite field baffle and the area without the limiting area baffle, thus providing a continuous fast preparation high quality graphene thin film of the dividing type graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for graphene film preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the divided-area type graphene preparation device. Discharging cavity (101) Feeding roller (102) Receiving cavity (103) Receiving roller (104) High temperature cavity (105) Carrier (106) Restricted area baffle (107) Slit (108) Heater (109) Shunt device (110) Reflection screen (111) Vacuum pump (112) Guide roller (113) Tension separating device (114) Substrate (115) Tension detecting device (116) Correcting device (117) First heater (1091) Second heater (1092) Third heater (1093) Heating heater (1094)