▎ 摘　　要

NOVELTY - The method involves forming a first coating layer (200) by coating a first dispersion in which a two-dimensional material (A) is dispersed on a substrate (100). The coating layer is annealed to form an insulating layer (300). A semiconductor layer is formed by coating the second dispersion, in which the two dimensional material (B) are dispersed on the insulating film. An electrode is patterned on the semiconductor film. A graphene layer (500) and a metal electrode are formed on the graphene layer. The graphene-metal layer is transferred onto the second coating layer. USE - Method for manufacturing large-area semiconductor device (claimed). ADVANTAGE - The method enables to manufacture large-area semiconductor device in a simple and cost-effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a large-area semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows the block diagram of the method for manufacturing large-area semiconductor device. (Drawing includes non-English language text) 100Substrate 200First coating layer 300Insulating layer 400Second coating layer 500Graphene layer