• 专利标题:   Insulating thermal conducting adhesive material comprises adhesive main body and insulating thermal conducting filler which is graphene structure composite material modified with boron nitride.
  • 专利号:   CN111187582-A
  • 发明人:   GU Z, WANG R, ZHOU K, CHEN Q
  • 专利权人:   SUZHOU SHIHUA NEW MATERIAL TECHNOLOGY CO
  • 国际专利分类:   C09J011/04, C09J133/02, C09J183/04, C09J007/10, C09J007/38, C09J009/02
  • 专利详细信息:   CN111187582-A 22 May 2020 C09J-133/02 202051 Pages: 6 Chinese
  • 申请详细信息:   CN111187582-A CN10184351 17 Mar 2020
  • 优先权号:   CN10184351

▎ 摘  要

NOVELTY - Insulating thermal conducting adhesive material comprises adhesive main body and insulating thermal conducting filler. The insulating thermal conducting filler is a graphene structure composite material modified with boron nitride. The thermal conductivity of the insulating thermal conducting adhesive material is 0.5-60 W/mk, and the resistivity is 109-1017 Omega .m. USE - Used as insulating thermal conducting adhesive material. ADVANTAGE - The material has ultra-high thermal conductivity that is much higher than that of boron nitride and similar to graphene structure materials. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing insulating thermal conducting adhesive material, comprising: (i) placing the graphene structure material in the reaction chamber of the system, cleaning the system gas path, and exhausting the air; (ii) passing inert gas and hydrogen as carrier gas and reducing gas to raise the temperature of the reaction chamber to 300-1200 degrees C and keeping warm for 0-60 minutes, where the volume flow rates of inert gas and hydrogen are 20-1000 sccm and 0-500 sccm respectively, and the gas pressure of the reaction chamber is 0.01-15MPa, and the temperature rise of the reaction chamber is recorded as 5-40 degrees C/minute; (iii) changing the volume flow of inert gas and hydrogen, and feeding into the precursors of nitrogen source and boron source, where the inert gas, hydrogen, nitrogen source and boron source precursor gas flow rates are 20-1000 sccm, 0-500 sccm, 10-100 sccm and 10-100 sccm, the pressure of the reaction chamber is 0.01-15 MPa, the temperature of the reaction chamber is 300-1200 degrees C, and the reaction time is 5-120 minutes; and (iv) stopping the nitrogen and boron source precursors, adjusting the volume flow of inert gas and hydrogen, where the volume flow of inert gas is 20-1000 sccm, and the volume flow rate of hydrogen is 0-500 sccm, and cooling the reaction chamber to room temperature, where the preparation of the boron nitride modified graphene structure composite material is a chemical vapor deposition method.