• 专利标题:   Preparation of fluorinated graphene used as e.g. semiconductor material for manufacturing field effect transistor and as electrode material for preparation of battery device, involves reacting graphene oxide with fluorinating agent.
  • 专利号:   CN104211048-A, CN104211048-B
  • 发明人:   CHEN Q, LI W, ZHAO F, ZHAO G, MEI C, GE C, LI B, WANG J
  • 专利权人:   SHANGHAI ORGANIC CHEM INST, SHANGHAI ORGANIC CHEM INST
  • 国际专利分类:   C01B031/04, C01B032/184
  • 专利详细信息:   CN104211048-A 17 Dec 2014 C01B-031/04 201523 Pages: 14 Chinese
  • 申请详细信息:   CN104211048-A CN10222358 05 Jun 2013
  • 优先权号:   CN10222358

▎ 摘  要

NOVELTY - Preparation of fluorinated graphene involves reacting graphene oxide with a fluorinating agent. USE - Preparation of fluorinated graphene used as semiconductor material for manufacturing field effect transistor, modification layer of solar energy battery, light-emitting diode device and information storage device, as electrode material for preparation of battery device, and as biomedical material for inducing tissue culture cells (all claimed). ADVANTAGE - The method enables preparation of fluorinated graphene having high purity.