• 专利标题:   Silicon-based bonded graphene radiating copper-clad ceramic substrate comprises copper foil layer orderly set from up to down, ceramic layer and silicon-based bonding graphene coating set on lower surface of ceramic layer.
  • 专利号:   CN215683018-U
  • 发明人:   LIANG X, JIA T, WU X, SUN X, YANG H, ZHANG G, RUAN S
  • 专利权人:   UNIV DALIAN TECHNOLOGY, ZHENGZHOU DUT HIGHTECH CO LTD
  • 国际专利分类:   C01B032/186, C04B041/85, C04B041/88, H05K007/20
  • 专利详细信息:   CN215683018-U 28 Jan 2022 H05K-007/20 202232 Chinese
  • 申请详细信息:   CN215683018-U CN21006789 12 May 2021
  • 优先权号:   CN21006789

▎ 摘  要

NOVELTY - The utility model relates to the technical field of electronic component radiating field, especially a silicon-based bonding graphene radiating copper-clad ceramic substrate, comprising a copper foil layer orderly set from top to bottom, a ceramic layer and a silicon-based bonding graphene coating, the silicon-based bonding graphene coating is set on the lower surface of the ceramic layer, the copper foil layer is covered on the upper surface of the ceramic layer. The utility model uses chemical vapour deposition (CVD) process, taking silicon-containing compound as silicon source catalyst, hydrocarbon as carbon source precursor, growing and depositing a silicon-based bonding graphene coating on the surface of the copper-coated ceramic layer, The heat generated by the circuit or the electronic device etched on the copper foil layer can be quickly radiated out through the ceramic substrate and the silicon-based graphene coating layer.