▎ 摘　　要

NOVELTY - Preparing full two-dimensional short channel field-effect transistor in large-scale comprises e.g. obtaining at least one sheets of single-layer graphene, transferring at least one sheets of single-layer graphene to global dielectric layer formed on surface of the first substrate, covering global dielectric layer to surface of the first substrate, and the single-layer graphite covering part of surface of full-area dielectric layer; performing direct-write line-scan etching on each single-layer graphene with a focused helium ion beam; obtaining single-layer two-dimensional semiconductor layer, transferring two-dimensional semiconductor layer to second substrate to obtain localized dielectric layer, and transferring localized dielectric layer onto third substrate; and covering spin-coat photoresist to surface of local dielectric layer, evaporating metal electrode to form contact electrode on source and drain electrodes and form top gate on local dielectric layer. USE - Method for preparing full two-dimensional short channel field-effect transistor in large-scale. ADVANTAGE - The single layer as graphene source and drain electrode of the semiconductor material contact effectively inhibits the Schottky barrier, reduces the power consumption of the field-effect transistor using single-layer two-dimensional semiconductor layer as the channel material, reducing the influence caused by short channel effect. DESCRIPTION OF DRAWING(S) - The drawing shows a mass preparation method of full two-dimensional short channel field-effect transistor of the embodiment.