▎ 摘　　要

NOVELTY - The transistor has source electrode and drain electrode that include graphene. Insulating material layer is equipped in lower portion of graphene and is etched selectively. Piezo material is equipped in the lower portion of graphene and etched position of insulating material layer. Crossed obstacle regulating circuit is equipped in lower portion of Piezo material. Drain electrode controls height of Fermi level of graphene so that on/off of electricity is controlled. USE - Transistor. ADVANTAGE - The transistor controls on/off of electricity efficiently. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a graphene single electron transistor; and (2) an electron tunneling graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the transistor.