▎ 摘　　要

NOVELTY - The low-power half-floating gate memory has a barrier layer (202) which is a first-type two-dimensional material with negative capacitance characteristics, and partially covers a graphene grid. A half-floating gate (203) is a second type of two-dimensional material, and covers the barrier layer. A semi-closed tunneling layer is a third type of two-dimensional material (204) with negative capacitance characteristics, and is located on the half-floating gate. A second end (206) of a heterojunction , which is a fifth type two-dimensional material with a second conductivity type, covers the semi-closed tunneling layer and a first end (205) of the heterojunction. A graphene drain (207) and a graphene source (208) are located on the second end of the heterojunction. USE - Low-power half-floating gate memory. ADVANTAGE - The low-power half-floating gate memory can effectively improve the reliability of the device, accelerate the data writing speed, increase the data retention time, and reduce the power consumption. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing low-power half-floating gate memory. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of the structure of a low-power half-floating gate memory. Barrier layer (202) Half-floating gate (203) Two-dimensional material (204) First end of the heterojunction (205) Second end of a heterojunction (206) Graphene drain (207) Graphene source (208)