• 专利标题:   Producing skyrmion based on graphene and metal complex materials useful in e.g. useful in magnetic storage and spinning electronic device comprises e.g. constructing magnetic multilayer film structure and adjusting perpendicular magnetic anisotropy value and Dzyaloshinskii-Moriya interaction value.
  • 专利号:   CN113659072-A
  • 发明人:   LIANG X, ZHAO L, RAO X, ZHAO G
  • 专利权人:   UNIV SICHUAN NORMAL
  • 国际专利分类:   H01L043/10, H01L043/14
  • 专利详细信息:   CN113659072-A 16 Nov 2021 H01L-043/14 202234 Chinese
  • 申请详细信息:   CN113659072-A CN10893274 04 Aug 2021
  • 优先权号:   CN10893274

▎ 摘  要

NOVELTY - Producing skyrmion based on graphene and metal complex materials, comprises (i) constructing magnetic multilayer film structure including firstly setting the complex material layer cobalt-platinum on substrate layer, adding ferromagnetic layer cobalt on complex material layer, setting graphene layer on the ferromagnetic layer, finally setting current injection layer on graphene layer, and forming complete calculation model through substrate layer, complex material layer, ferromagnetic layer, graphene layer, and current injection layer, which are same geometric center, and (ii) generating skyrmions injecting spin polarization current into current injection layer, where injection time is 0.5 ns, and adjusting perpendicular magnetic anisotropy (PMA) value between graphene layer and ferromagnetic layer and Dzyaloshinskii-Moriya interaction (DMI) value of ferromagnetic layer and complex material layer. USE - The method is useful for producing skyrmion based on graphene and metal complex materials, which is useful in magnetic storage and spinning electronic device, and non-volatile spin storage device. ADVANTAGE - The method: enables adjusting the DMI value and PMA value in the model by adjusting the thickness between the graphene and the ferromagnetic; realizes the generation of skyrmion in the magnetic structure through injecting spin polarization current in the current injection layer to generate skyrmion by DMI of the complex material layer; realizes better control of the structure DMI and PMA values, and the nucleation of each magnetic structure in a large range; induces large DMI by graphene and ferromagnetism, which no longer requires the non-magnetic layer to have strong spin-orbit coupling, which greatly expands the selection range of heterogeneous structure materials; and resists the oxidation of the metal layer by addition of the graphene, but also act as the active agent for the growth of the magnetic layer, forming a multi-layer film structure, which is more achievable.