▎ 摘　　要

NOVELTY - A metal-semiconductor-metal-type UV detector has a bottom-up substrate, a graphene template layer, an aluminum gallium nitride nanopillar, a nickel primary metal layer and a gold secondary metal layer that is provided with the aluminum gallium nitride nanopillar. The metal-semiconductor-metal-type UV detector further comprises a silicon nitride insulating layer filled in aluminum gallium nitride nanopillar. The nickel primary metal layer and gold secondary metal layer are used as electrode materials to form an interdigital electrode. USE - Metal-semiconductor-metal-type UV detector is useful for detection of UV A, UV B and UV C UV lights and in ultraviolet missile guidance, open flame detection and solar illumination detection applications. ADVANTAGE - The metal-semiconductor-metal-type UV detector has good solar blindness characteristics, and can effectively detect light with wavelength of 200-365 nm and UV A, UV B and UV C UV lights with high sensitivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for production of metal-semiconductor-metal-type UV detector.