• 专利标题:   Method of obtaining instrument graphene structures grown on substrate-donor and then covered with film, auxiliary for grapheme layer transfer.
  • 专利号:   RU2538040-C2, RU2013120389-A
  • 发明人:   SOOTS R A, ANTONOVA I V, GOLOD S V, SELEZNEV V A, KOMONOV A I, PRINTS V YA
  • 专利权人:   AS SIBE SEMICONDUCTORS PHYSICS INST, AS SIBE SEMICONDUCTORS PHYSICS INST
  • 国际专利分类:   H01L021/04
  • 专利详细信息:   RU2538040-C2 10 Jan 2015 H01L-021/04 201521 Russian
  • 申请详细信息:   RU2538040-C2 RU120389 30 Apr 2013
  • 优先权号:   RU120389

▎ 摘  要

NOVELTY - Grapheme layer is grown on substrate-donor and then covered with film, auxiliary for grapheme layer transfer. After that, tightening frame, preventing crumpling during transfer, is created on film, auxiliary for grapheme layer transfer, or continuous strengthening film, securing mechanical integrity and preventing crumpling during transfer, is applied. Graphene layer, covered with film, auxiliary for grapheme layer transfer, is separated from substrate-donor and its transfer on substrate is carried out. After transfer of grapheme layer, covered with film, auxiliary of grapheme layer transfer, on substrate, it is pressed to substrate. USE - Chemistry. ADVANTAGE - Prevention of impairment of structures and electrophysical characteristics of grapheme layers.17 cl, 2 dwg