▎ 摘　　要

NOVELTY - The method involves irradiating X-ray in a graphene sample at an angle according to exposure angle. The sample is laid in the chamber. Temperature of the sample is controlled at 278-328 degree Kelvin. A collimated beam X-ray irradiation equipment is arranged at the inner side of the chamber for irradiating the X-ray in inner side of the chamber to detect and analyze diffraction by using a detecting apparatus. The sample is placed in a floor. An X-ray analysis equipment is provided with the detecting apparatus for detecting diffracted or reflected X-ray irradiated in the sample. USE - Method for analyzing an extreme super-thin film graphene by using X-ray. ADVANTAGE - The method enables obtaining crystallographic information through X-ray analysis of a thin film less than 3nm, and realizing industrial application of graphene spotlighted as next generation new material and analysis of material property. The method enables obtaining diversity and certainty of the graphene product, ensuring reliability and improving product competitiveness of finished product. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a position of an X-radiation angle about a super-thin film graphene with an increased X-ray non-penetrated type substrate and X-ray is diffracted from and comes out of the substrate positioned in a hemisphere of a sample upper layer. '(Drawing includes non-English language text)'