• 专利标题:   Wet etching chemical transfer method, useful for improving surface cleanliness of graphene, comprises depositing metal layer on metal-catalyzed substrate and graphene, and coating polymethylmethacrylate organic colloid on metal layer.
  • 专利号:   CN104030274-A, CN104030274-B
  • 发明人:   SUI Y, ZHANG H, ZHANG Y, YU G, CHEN Z, LI X, ZHU B, TANG C
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN104030274-A 10 Sep 2014 C01B-031/04 201480 Pages: 7 Chinese
  • 申请详细信息:   CN104030274-A CN10231250 28 May 2014
  • 优先权号:   CN10231250

▎ 摘  要

NOVELTY - The wet etching chemical transfer method comprises depositing a metal layer on a metal-catalyzed substrate and graphene, coating polymethylmethacrylate organic colloid on one surface of the metal layer, adding a combination of the organic colloid/metal layer/graphene/metal-catalyzed substrate into an etching solution, removing the organic colloids, adding combination of matrix metal and graphene into the etching solution, and removing the organic colloids on the surface of the metal layer. The deposited metal layer has a thickness of 30 nm. The organic colloids have a thickness of 200 nm. USE - The wet etching chemical transfer method is useful for improving surface cleanliness of graphene (claimed). ADVANTAGE - The wet etching chemical transfer method can effectively avoid the transfer of the organic colloid on the surface of the graphene.