▎ 摘　　要

NOVELTY - The utility model claims a composite substrate/group III nitride micron column structure. the upper insertion layer is the medium material growing graphene composite inserted substrate, the graphene layer is grown group III nitride micron column. The utility model in the graphene is directly prepared on the a sapphire dielectric material by low-temperature solid carbon source, on the composite substrate growing to obtain the group III nitride micron column, which solves the problem that it is impossible to nucleation growth and widens the range of the dielectric substrate for III-nitride epitaxial group III nitride on the some dielectric material. especially using graphene/quartz composite substrate epitaxial preparing group III nitride column structure, which effectively reduces production cost.