1. 平台首页
  2. 国际专利信息
  • 专利标题:   Preparation of metal vapor auxiliary layer rapid growth graphene comprises taking copper-nickel alloy substrate, washing, placing in chemical vapor deposition chamber, positioning, sparging with argon and methane, and growing.
  • 专利号:   CN105779964-A
  • 发明人:   JIANG M, LU G, XIE X, YANG C, WU T, ZHANG X, WANG H
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C23C016/26, C23C016/44
  • 专利详细信息:   CN105779964-A 20 Jul 2016 C23C-016/26 201661 Pages: 14 Chinese
  • 申请详细信息:   CN105779964-A CN10345428 23 May 2016
  • 优先权号:   CN10345428

▎ 摘　　要

NOVELTY - Preparation of metal vapor auxiliary layer rapid growth graphene comprises taking copper-nickel alloy substrate, washing, placing in chemical vapor deposition chamber, positioning, sparging with argon and methane, and growing. USE - Method for preparing metal vapor auxiliary layer rapid growth graphene. ADVANTAGE - The method is simple, inexpensive and repeatable. The material has optimized growth parameter.